Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 087-090.
https://doi.org/10.15407/spqeo13.01.087

Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
V.V. Trachevsky1, L.P. Steblenko2, P.Y. Demchenko3, O.V. Koplak2, A.M. Kuryliuk2, A.K. Melnik1

1G.V. Kurdyumov Institute for Metal Physics, NAS of Ukraine, 36, Vernadsky Ave., 03142 Kyiv, Ukraine
2Physics Department, Taras Shevchenko Kyiv National University, 2, Academician Glushkov Ave., 03680 Kyiv, Ukraine; e-mail: koplak_o@ukr.net
3I. Franko Lviv National University, Chemistry Department, 6, Kyrylo and Mefodiy str., 79005 Lviv, Ukraine

Abstract. In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (р в – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field.

Keywords: silicon, structural defects, magnetic field, oxidation.

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