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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 091-094.
Influence of Cr doping on optical
and photoluminescent properties of CdTe
1Yuri Fedkovych Chernivtsi National University,
2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine,
Phone: +38 (03722) 46-877, fax: +38 (03722) 46-877; e-mail: semicon@chnu.cv.ua
Abstract. Spectra of transmission and low-temperature photoluminescence of CdTe:Cr
crystals have been investigated for concentrations of the doping impurity (Cr) from
1∙10 17 to 4∙10 19 cm -3 in the melt. We have found additional absorption bands with
maxima at 1 1.9 μm and 2 7.0 μm induced by the presence of this dopant. An
additional band of radiative recombination in the vicinity of 1.22 eV is caused by
electron transitions from the conduction band to the deep donor levels E v +(0.36-0.38) eV,
which correspond to the Cr 1+ defect entering to clusters. We have also observed the shift
of CdTe:Cr absorption edge to the longwave region. This shift is caused by strong lattice
deformation near the Cr 2+ impurity position due to the static Jahn-Teller effect.
Keywords: CdTe, magnetic dopant, intra-center transitions, photoluminescence, trans-
mission spectra.
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