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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 095-097.
Spin-dependent current in silicon p-n junction diodes
Taras Shevchenko Kyiv National University, Radiophysics Department,
64, Volodymyrs’ka str., 01601 Kyiv, Ukraine
Abstract. We have used electrically detected spin-dependent paramagnetic resonance to
investigate the non-equilibrium conductivity in a silicon diode. In order to create
paramagnetic centers, we used diode with a polished surface (that includes p-n junction).
The dependence of relative changes in the amplitude of a signal under resonance
conditions and the total value of current through the diode were investigated. We have
found the presence of inversion channel on the surface of p-n junction and proposed the
model of the influence of spin resonance on the channel conductivity. The upper value of
the time constant inherent to the spin-dependent process was determined as
approximately s 10 6
. The influence of the spin-dependent process on the charge state in
inversion channel has been discussed.
Keywords: EDMR, ESR, polished surface, paramagnetic states, inversion layer.
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