Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 1. P. 095-097.


Spin-dependent current in silicon p-n junction diodes
O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko

Taras Shevchenko Kyiv National University, Radiophysics Department, 64, Volodymyrs’ka str., 01601 Kyiv, Ukraine

Abstract. We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the amplitude of a signal under resonance conditions and the total value of current through the diode were investigated. We have found the presence of inversion channel on the surface of p-n junction and proposed the model of the influence of spin resonance on the channel conductivity. The upper value of the time constant inherent to the spin-dependent process was determined as approximately s 10 6 . The influence of the spin-dependent process on the charge state in inversion channel has been discussed.

Keywords: EDMR, ESR, polished surface, paramagnetic states, inversion layer.

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