Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 007-011.

Simple method for SiC nanowires fabrication
V.S. Kiselov * , O.S. Lytvyn, V.O. Yukhymchuk, A.E. Belyaev

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine *Corresponding author − fax: 38 (044)-525-59-40; e-mail:

Abstract. In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 °C by using a simple and low-cost method in an industrial furnace with a resistant heater.

Keywords: silicon carbide, nanowires, vapor-solid mechanism, large-scale production.

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