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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 062-070.
X-ray study of dopant state in highly doped
semiconductor single crystals
1Ioffe Physico-Technical Institute RAS,
Politekhnicheskaya 26, 194021 St.-Petersburg, Russia Abstract.
Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction
methods for diagnostics of highly doped semiconductor crystals in characterization of
dopant state – whether it is in the crystals in the form of solid solution or under various
stages of its decomposition – are shown. The combination of techniques of X-ray
diffraction topography and high resolution X-ray diffractometry, higher sensitive to the
crystal lattice strain than that traditionally used is taken as the basis for investigating the
crystals with slight and strong absorption of X-rays. These methods were supplemented
with digital processing of the topographic images of growth striations and electrical
measurements.
Keywords: microdefects, clusters, growth striations, X-ray topography, X-ray
diffractometry.
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