Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 080-087.

Enhanced 2D plotting method for scanning probe microscopy imaging
G.V. Beketov

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail:

Abstract. An enhanced 2D plotting method for scanning probe microscopy imaging implementing a gradient-based value mapping for pseudocolor images and its application to studies of epitaxial layer surface morphology is presented. It is demonstrated that this method is capable of revealing the finest features on growth surfaces. Presence of elementary growth steps on the surface of flat-topped hillocks found on Hg 0.8 Cd 0.2 Te LPE-grown epitaxial layers, examples of cooperative effects of screw dislocations on PbTe and Hg 1-x Cd x Te epilayer growth as well as atypical surface morphology of PbTe epilayers are discussed.

Keywords: scanning probe microscopy, pseudocolor mapping, epitaxial layer, elementary growth mechanisms, growth steps, dislocations.

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