|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 080-087.
Enhanced 2D plotting method for scanning probe
microscopy imaging
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: gbeketov@isp.kiev.ua
Abstract.
An enhanced 2D plotting method for scanning probe microscopy imaging
implementing a gradient-based value mapping for pseudocolor images and its application
to studies of epitaxial layer surface morphology is presented. It is demonstrated that this
method is capable of revealing the finest features on growth surfaces. Presence of
elementary growth steps on the surface of flat-topped hillocks found on Hg 0.8 Cd 0.2 Te
LPE-grown epitaxial layers, examples of cooperative effects of screw dislocations on
PbTe and Hg 1-x Cd x Te epilayer growth as well as atypical surface morphology of PbTe
epilayers are discussed.
Keywords: scanning probe microscopy, pseudocolor mapping, epitaxial layer,
elementary growth mechanisms, growth steps, dislocations.
| ||