Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 1. P. 122-126.

Thin films CdS/CdTe solar cells with different activation processes base layer
G.S. Khrypunov1, T.N. Shelest1, T.N. Li1, A.V. Meriuts1, N.A. Kovtun1, A.V. Makarov2, L.V. Avksentyeva2

1Kharkov State Polytechnic University, UA-61002 Kharkov, Ukraine, E-mail: 2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine Phone: +38(044) 525-62-02; fax: +38(044) 525-83-42; e-mail:

Abstract. Shown in this work is the possibility to create industrial technology for production of solar cells FTO/CdS/CdTe. The technology includes annealing in freon processing step for activation of cadmium telluride base layers deposited by thermal vacuum evaporation. Solar cells with efficiency of 7% have been obtained. Structural and morphological researches allowed to identify interrelation between photovoltaic characteristics and features of the recrystalization process in base layers after annealing in freon as compared with the standard chloride treatment.

Keywords: solar cells FTO/CdS/CdTe, freon, recrystalization.

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