Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 1. P. 037-042.
DOI: https://doi.org/10.15407/spqeo16.01.037/

                                                                 

Photoelectrical analysis of n-TiO2/p-CdTe heterojunction solar cells
V.V. Brus1, P.D. Maryanchuk1, O.A. Parfenyuk1, N.D. Vakhnyak2

1Yu. Fedkovych Chernivtsi National University, Department of Electronics and Energy Engineering, 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine; e-mail: victorbrus@mail.ru
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: div47@isp.kiev.ua

Abstract. Photoelectrical properties of n-TiO2/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent dominating charge transport mechanism based on tunnel-recombination processes at the TiO2/CdTe heterojunction interface was taken into consideration. The width W of the space charge region of the solar cells and consequently the concentration of uncompensated acceptors were determined using the open-circuit method.

Keywords: TiO2, CdTe, heterojunction, solar cell.

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