|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 1. P. 043-047.
References 1. T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita, N. Sugiyama, E. Toyoda, and S. Takagi, High Performance Uniaxially Strained SGOI pMOSFETs Fabricated by Lateral Strain Relaxation Technique on Globally Strained SGOI. IEEE Trans. Electron Devices, 53, p. 2809-2815 (2006).https://doi.org/10.1109/TED.2006.884078 2. C.K. Maiti and G.A. Armstrong, Applications of Silicon Germanium Heterostructure Devices. Inst. of Physics, UK, 2001. https://doi.org/10.1887/0750307234 3. S. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, A logic nanotechnology featuring strained-silicon. IEEE Electron Dev. Lett. 24, p. 191-193 (2004). https://doi.org/10.1109/LED.2004.825195 4. C. Smith, Piezoresistance effect in germanium and silicon. Phys Rev. 94, p. 42-49 (1954). https://doi.org/10.1103/PhysRev.94.42 5. B. Ghyselen, Strain engineering in SOI-type materials for future technologies. Mat. Sci. Eng. B, 124-125, p. 16-23 (2005). https://doi.org/10.1016/j.mseb.2005.08.116 6. R.K. Savkina, A.B. Smirnov, Nitrogen incorporation into GaAs lattice as a result of the surface cavitation effect. J. Phys. D: Appl. Phys., 43, 425301 (2010). https://doi.org/10.1088/0022-3727/43/42/425301 7. R.K. Savkina, Structurization of semiconductor surfaces induced by ultrasound. Functional Materials, 19(1), p. 38-43 (2012). 8. C. Wu, C.H. Crouch, L. Zhao, J.E. Carey, R. Younkin, J.A. Levinson, E. Mazur, R.M. Farrell, P. Gothoskar, and A. Karger, Near-unity below- band-gap absorption by microstructured silicon. Appl. Phys. Lett. 78, p. 1850 (2001). https://doi.org/10.1063/1.1358846 9. H. Soyama, S. Saitoh, D.O. Macodiyo and M. Koyanagi, C-V characteristics of backside damage gettering introduced by a cavitating jet in silicon wafer. Proc. the 2nd Intern. Symposium on Mechanical Science based on Nanotechnology, 2005, p. 85-88. 10. M. Virot, R. Pflieger, E.V. Skorb, J. Ravaux, T. Zemb, and H. Mohwald, Crystalline silicon under acoustic cavitation: From mechanoluminescence to amorphization. J. Phys. Chem. C, 116, 15493 (2012). https://doi.org/10.1021/jp305375r 11. S.I. Takagi, J.L. Hoyt, J.J. Welser, and J.F. Gibbons, Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 80, p. 1567 (1996). https://doi.org/10.1063/1.362953 12. database.iem.ac.ru/mincryst. |