Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 1. P. 059-063.
DOI: https://doi.org/10.15407/spqeo16.01.059/

                                                                 

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
V.V. Tetyorkin1, A.V. Sukach1, A.I. Tkachuk2 and S.P. Movchan1

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
2V. Vinnichenko Kirovograd State Pedagogical University, Kirovograd, Ukraine Phone: 38 (044) 525-1813; e-mail: teterkin@isp.kiev.ua

Abstract. Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 °K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0° μm was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.

Keywords: iso-type, heterojunction, infrared, photovoltaic, response.

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