Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 014-020.
https://doi.org/10.15407/spqeo17.01.014

                                                                 

Analysis of features of recombination mechanisms in silicon solar cells
R.M. Korkishko, V.P. Kostylyov, N.A. Prima, A.V. Sachenko, O.A. Serba, T.V. Slusar 1 , V.V. Chernenko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, Kyiv 03028, Ukraine, phone/fax: +38 (044) 525-5788, E-mail: vkost@isp.kiev.ua
1 National Aviation University, 1, prospect Komarova, Kyiv 03058, Ukraine
2, Kotsiubynsky str., 58012 Chernivtsi; Phone: +38(037)2244816, e-mail: ktf@chnu.edu.ua

Abstract. Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of solar cells. The first construction is a solar cell with contacts on the front and back surfaces, and the second - solar cells with back barriers and contact metallization. Analyzed in the work are spectral dependences of the internal quantum efficiency for the short-circuit current and small- signal photo-e.m.f. It has been shown that the short-wave drop of the short-circuit current is related with recombination on deep centers at the front surface as well as inter-band Auger recombination in the heavily doped emitter. At the same time, availability of the short- wave drop in the small-signal photo-e.m.f. is related with limitation of the efficient rate of surface recombination Seff (λ) due to diffusion inflow. The latter takes place when a layer with the thickness dp and increased recombination is available near illuminated surface. In this case, the mechanism providing decrease in the small-signal photo-e.m.f. in the area of strong light absorption is related with increasing the efficient rate of surface recombination near the front surface, when the dominant amount of electro-hole pairs is generated in the layer with the increased recombination rate. The same mechanism is responsible for the short-circuit current drop in solar cells with back barriers and contact metallization. Juxtaposition of theoretical and experimental results enabled to determine parameters that characterize sub-surface properties of solar cells, namely: the thickness of the surface layer with increased recombination, lifetime of carriers in it, and dependences Seff (λ).

Keywords:silicon solar cell, photo-e.m.f., surface recombination.

Manuscript received 26.11.13; revised version received 00.00.13; accepted for publication 20.03.13; published online 31.03.13.

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