Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 021-024.


Chemical treatment of Cd 1 – x Mn x Te single crystals with H 2O2 –HI–citric acid aqueous solutions
R.O. Denysyuk

Ivan Franko Zhytomyr State University, 40, V. Berdychivska str., Zhytomyr

Abstract. The process of CdTe and Cd1–x Mnx Te dissolution in 30 % H2O2 –HI–citric acid solutions under reproducible hydrodynamic conditions has been studied. The equal dissolution rate surfaces (Gibbs diagrams) have been plotted. Limiting stages of the semiconductor dissolution process have been determined. Regions of polishing, selective and unpolishing solutions in the mentioned system have been ascertained. The influence of Mn concentrations in solid solutions on the etching rate and quality has been established.

Keywords:cadmium telluride, chemical dissolution, citric acid, semiconductor, etching rate, solid solution.

Manuscript received 03.11.13; revised version received 20.12.13; accepted for publication 20.03.14; published online 31.03.14.

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