Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 025-028.


Investigation of the influence of isovalent impurity of silicon and γ-irradiation ( 60 Co) on electrophysical parameters of n-Ge ⟨Sb⟩
G.P. Gaidar

Institute for Nuclear Research, National Academy of Sciences of Ukraine,
47, prospect Nauky, 03680 Kyiv, Ukraine; e-mail:

Abstract. The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge ⟨Sb⟩ single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т ~ 77.4 K), the presence of isovalent impurity significantly reduces the mobility of charge carriers and changes the sign of inequality n e 300 K / n e 77.4 K ⟩ 1 characteristic of n-Ge ⟨Sb⟩ single crystals to the opposite one. It has found that in n-Ge ⟨Sb⟩ samples irradiated by γ-rays ( 60 Co) with the dose 1.23x10 8 R, the charge carrier mobility has low radiation stability and decreases with increasing the magnetic field, while remaining practically unchanged in the region of the intermediate H values.

Keywords:cgermanium, isovalent impurity, silicon, γ-irradiation, Hall effect, charge carrier mobility, electron concentration.

Manuscript received 11.11.13; revised version received 26.12.13; accepted for publication 20.03.14; published online 31.03.14.

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