Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 025-028.
Investigation of the influence of isovalent impurity of silicon
and γ-irradiation ( 60 Co) on electrophysical parameters of n-Ge 〈Sb〉
Institute for Nuclear Research, National Academy of Sciences of Ukraine,
Abstract. The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge 〈Sb〉 single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т ~ 77.4 K), the presence of isovalent impurity significantly reduces the mobility of charge carriers and changes the sign of inequality n e 300 K / n e 77.4 K 〉 1 characteristic of n-Ge 〈Sb〉 single crystals to the opposite one. It has found that in n-Ge 〈Sb〉 samples irradiated by γ-rays ( 60 Co) with the dose 1.23x10 8 R, the charge carrier mobility has low radiation stability and decreases with increasing the magnetic field, while remaining practically unchanged in the region of the intermediate H values.
Keywords:cgermanium, isovalent impurity, silicon, γ-irradiation, Hall effect, charge carrier mobility, electron concentration.
Manuscript received 11.11.13; revised version received 26.12.13; accepted for publication 20.03.14; published online 31.03.14.