Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 029-033.


Dislocation emission caused by different types of nanoscale deformation defects in CdTe
V.N. Babentsov, V.A. Boyko, S.G. Gasan-zade, G.A. Shepelskii, S.V. Stariy

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine Phone: 38 (044) 525-1813, e-mail:

Abstract. Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized by chemical etching and low temperature photoluminescence in a mapping regime. The crystallographic orientation of the dislocation rosettes of macroscopic plastic deformation lines was analyzed on the (100), (110), and (111) surfaces.

Keywords:photoluminescence, dislocation-related defect, dislocation emission.

Manuscript received 11.11.13; revised version received 22.01.14; accepted for publication 20.03.14; published online 31.03.14.

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