Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 034-040.


Electroluminescent properties of Tb-doped carbon-enriched silicon oxide
S.I. Tiagulskyi1 , A.N. Nazarov1 , S.O. Gordienko1 , A.V. Vasin1 , A.V. Rusavsky1 , T.M. Nazarova2 , Yu.V. Gomeniuk1 , G.V. Rudko1 , V.S. Lysenko1 , L. Rebohle3 , M. Voelskow3 , W. Skorupa3 , Y. Koshka4

1Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
2Department of Common and Inorganic Chemistry, National Technical University of Ukraine "KPI", Kyiv, Ukraine
3Institut fur Ionenstrahlphysik und Materialforschung, Helmholtz Zentrum Dresden-Rossendorf e.V., Dresden, Germany
4Department of Electrical and Computer Engineering, Mississippi State University,
P.O. Box 9571, Mississippi 39762, USA Phone/fax:+38 (044) 525 61 77; e-mail:

Abstract. An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a-SiOx:C:Tb) on silicon has been developed. The a-SiOx:C:Tb active layer was formed by RF magnetron sputtering of a-SiO1-x:Cx:H(:Tb) film followed by high-temperature oxidation. It was shown that, depending on the polarity of the applied voltage, the electroluminescence is either green or white, which can be attributed to different mechanisms of current transport through the oxide film - space charge limited bipolar double injection current for green electroluminescence and trap assisted tunneling or Fowler-Nordheim tunneling for white electroluminescence.

Keywords:electroluminescence, a-SiO:C/Si heterostructure, Tb, RF magnetron sputtering, charge transport mechanisms.

Manuscript received 25.11.13; revised version received 23.01.14; accepted for publication 20.03.14; published online 31.03.14.

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