Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 075-079.
Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
45, prospect Nauky, 03028 Kyiv, Ukraine
Abstract. The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induction. The defect structure transformations were inferred from the radiative recombination spectra in the 0.6-2.5 μm at 77 K. A possible mechanism of observed modifications related to the electron spin transformation is discussed.
Keywords: photoluminescence, weak magnetic field, impurity-defect composition.
Manuscript received 02.12.13; revised version received 29.01.14; accepted for publication 20.03.14; published online 31.03.14.