Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 1. P. 097-099.
https://doi.org/10.15407/spqeo17.01.097

                                                                 

Features of Auger-emission in channeling
I.A. Kossko, A.Ye. Denisov1

Institute for Problems of Materials Science, 3, vul. Krzhizhanovskogo, 03142 Kyiv, Ukraine Kossko@ipms.kiev.ua
1Center for Nanotechnologies RT, 50, ul. Peterburgskaya, 420107 Kazan, Russia Alexey.Denisov@nanort.ru

Abstract. Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for low- energy Auger-electrons in silicon, when changing the angle of acting initial radiation during sample rotation.

Keywords: Auger-electron, channeling, angular anisotropy.

Manuscript received 10.10.14; revised version received 20.02.14; accepted for publication 20.03.14; published online 31.03.14.

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