Semiconductor Physics, Quantum Electronics & Optoelectronics, 20 (1), P. 123-128 (2017).

Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
G.P. Gaidar1, P.I. Baranskii2

1Institute for Nuclear Research, National Academy of Sciences of Ukraine, 47, prospect Nauky, 03680 Kyiv, Ukraine; e-mail:
2V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. Features of the concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag M in germanium and silicon crystals of n-type conductivity were found in a wide range of charge carrier concentrations. Insensitivity of the anisotropy parameter M to the presence of impurities in the germanium crystals up to the concentrations of  1015 cm 3 was found, whereas in silicon with increasing the doping level the monotonic decrease in this parameter was observed. The significantly lower absolute values of the parameter M were obtained for the silicon crystals as compared with the corresponding values of this parameter for the germanium ones. The physical nature of the identified effects was explained.

Keywords: germanium, silicon, thermoelectromotive force (thermo-emf), tenso-thermo-emf, anisotropy parameter of thermo-emf, anisotropy parameter of mobility, charge carrier concentration.

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