Abstract. The dose dependence of tensoresistance X /0, which was measured at the symmetrical orientation of the deformation axis (compression) relatively to all isoenergetic ellipsoids both in the initial and in -irradiated samples, was investigated in n-Si crystals. It has been shown that changing the irradiation doses is accompanied by not only quantitative but also qualitative changes in the functional dependence X /0 = f (Х). Features of tensoresistance in n-Si irradiated samples were found depending on three crystallographic directions, along which the samples were cut out and the mechanical stress Х was applied.

Keywords: silicon, γ-irradiation, mechanical stress, deformation axis, tensoresistance.

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