Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (1), P. 80-82 (2018).

Luminescence of crystals ZnSe <Al>:Gd
V.P. Makhniy1, N.D. Vakhnyak2, O.V. Kinzerska1,*, I.M. Senko1

1Yu. Fedkovych Chernivtsi National University, 2, Kotsyubinskogo str., 58012 Chernivtsi, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prosp. Nauky, 03680 Kyiv, Ukraine

Abstract. It has been experimentally shown that the luminescence spectra of ZnSe <Al> crystals doped with Gd from the vapor phase contain two mutually compatible luminescence bands. It is established that the low-energy G-band is due to recombination with association of complexes and , and the boundary B-band is the result of annihilation of excitons and interband transitions.

Keywords: zinc selenide, luminescence, point defects, associates.

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