Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (1), P. 80-82 (2018).
DOI: https://doi.org/10.15407/spqeo21.01.080

Luminescence of crystals ZnSe <Al>:Gd
V.P. Makhniy1, N.D. Vakhnyak2, O.V. Kinzerska1,*, I.M. Senko1

1Yu. Fedkovych Chernivtsi National University, 2, Kotsyubinskogo str., 58012 Chernivtsi, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prosp. Nauky, 03680 Kyiv, Ukraine
*E-mail: oksanakinzerska@gmail.com

Abstract. It has been experimentally shown that the luminescence spectra of ZnSe <Al> crystals doped with Gd from the vapor phase contain two mutually compatible luminescence bands. It is established that the low-energy G-band is due to recombination with association of complexes and , and the boundary B-band is the result of annihilation of excitons and interband transitions.

Keywords: zinc selenide, luminescence, point defects, associates.

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