Semiconductor Physics, Quantum Electronics & Optoelectronics, 23 (1), P. 46-51 (2020).

Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena
G.V. Milenin1, R.A. Redko1,2

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, prospect Nauky, 03680 Kyiv, Ukraine
2State University of Telecommunications, 7, Solomenska str., 03680 Kyiv, Ukraine E-mail:;

Abstract. The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the direction of its propagation, as well as the appearance of a gradient ponderomotive force in an inhomogeneous wave have been analyzed. The features of the appearance of an electric force acting on charged point defects as a result of formation of electron-hole junctions around charged dislocations have been studied. Analytical relationships describing the dynamics of impurity ions in semiconductor structures exposed to microwave radiation have been presented.

Keywords: microwave radiation, charged defect, particle drift, ponderomotive force.

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