Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (1), P. 100-104 (2021).

Investigation of Ge p-i-n photodetector as a part of pulsed laser rangefinder prototype
A.V. Fedorenko1 , I.O. Vorona2 , V.P. Maslov1

1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prosp. Nauky, 03680 Kyiv, Ukraine
2 Institute for Single Crystals, NAS of Ukraine, 61001 Kharkiv, Ukraine

Abstract. The process of diffusion method for production of high-speed Ge p-i-n photodiodes for a laser rangefinder with a maximum photosensitivity at the wavelength 1.54 μm and a new passivating layer of ZnSe is described. Theoretical modeling of the rangefinder operation in real conditions was performed to determine the requirements for the sensitivity of the photodetector. The threshold sensitivity of the split photodetector as a part of the model of laser rangefinder was experimentally investigated. The correspondence between the calculated values and the sensitivity of the photodetector was ascertained, which allowed to draw the conclusion about the possibility of its application as a part of laser rangefinder.

Keywords: Ge, p-i-n photodiode, pulsed laser rangefinder, range of action, threshold sensitivity of the photodetector.

Full Text (PDF)

Back to Volume 24 N1

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.