Semiconductor Physics, Quantum Electronics & Optoelectronics, 24 (1), P. 43-47 (2021).
DOI: https://doi.org/10.15407/spqeo24.01.043
Influence of the near-surface regions of the space charge
in semiconductor crystals on defect transformation
stimulated by action of magnetic fields
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
2State University of Telecommunications, 7, Solomyanska str., 03680 Kyiv, Ukraine
E-mail: milenin.gv@gmail.com; redko.rom@gmail.com
Abstract.
The mechanisms of electromagnetic radiation in the near-surface regions of
semiconductors depleted of the majority charge carriers under action of magnetic fields, the
induction vector of which is parallel to the surface of the crystal, have been analyzed. The
relationships for estimating the radiation power of space charge regions have been derived.
Keywords: semiconductor crystal, space charge, magnetic field, bremsstrahlung, cyclotron
radiation.
G.V. Milenin 1 ,
R.A. Redko 1, 2
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