TY  - JOUR
TI  - Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime
AU  - Latreche, A.
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
JO  - Semiconductor Physics, Quantum Electronics & Optoelectronics
VL  - 24
IS  - 1
SP  - 16
EP  - 21
PY  - 2021
DA  - 2021
DO  - 10.15407/spqeo24.01.016
UR  - https://doi.org/10.15407/spqeo24.01.016
N2  - In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.
KW  - tunneling current
KW  - field emission
KW  - thermionic–field emission
KW  - Schottky diode
KW  - image force barrier lowering
KW  - trapezoidal barrier
ER  -