Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (1), P. 006-009 (2022).
DOI: https://doi.org/10.15407/spqeo25.01.006

Thermal stability of electrical parameters of silicon crystal doped with nickel during growth

M. K. Bakhadyrkhanov 1, K. A. Ismailov2, E. J. Kosbergenov2

1Tashkent State Technical University,
Universitetskaia str. 2, 100095, Tashkent, Uzbekistan
2Karakalpak State University named after Berdakh,
230112, Nukus, Uzbekistan
E-mail: kanatbay.ismailov@gmail.com, ernazar.kosbergenov@gmail.com

Abstract. This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5...25 hours). This is the most cost-effective way to create material for semiconductor devices and solar cells with stable parameters.

Keywords:silicon, thermal donor, nickel, doping, thermal stability.

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