Semiconductor Physics, Quantum Electronics & Optoelectronics, 25 (1), P. 030-035 (2022).

Energy criterion for the stability of defects in semiconductor crystals to the action of external fields
G.V. Milenin1, R.A. Redko1,2, S.M. Redko1

11V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine,
41, prospect Nauky, 03680 Kyiv, Ukraine
2State University of Telecommunications, 7, Solomenska str., 03110 Kyiv, Ukraine

Abstract. A criterion for the stability of defects in semiconductor structures to the action of magnetic and electric fields, electromagnetic radiation, acoustic waves, mechanical stresses has been formulated. Analytical relations have been obtained for the threshold parameters of external fields, at which transformation of defects was observed. The results of calculations of the threshold values for the magnetic field induction that cause a change in the state of dislocations and defect clusters in semiconductor crystals have been presented.

Keywords:semiconductor, defect, magnetic field, electromagnetic field, acoustic wave, mechanical stress.

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