@article{spqeo25n1p006,
  title = {Thermal stability of electrical parameters of silicon crystal doped with nickel during growth},
  author = {M. K. Bakhadyrkhanov and K. A. Ismailov and E. J. Kosbergenov},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2022},
  volume = {25},
  number = {1},
  pages = {006--009},
  doi = {10.15407/spqeo25.01.006},
  url = {https://doi.org/10.15407/spqeo25.01.006},
  abstract = {This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5...25 hours). This is the most cost-effective way to create material for semiconductor devices and solar cells with stable parameters.},
  keywords = {silicon, thermal donor, nickel, doping, thermal stability}
}