TY  - JOUR
AU  - M. K. Bakhadyrkhanov
AU  - K. A. Ismailov
AU  - E. J. Kosbergenov
TI  - Thermal stability of electrical parameters of silicon crystal doped with nickel during growth
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
PY  - 2022
VL  - 25
IS  - 1
SP  - 006
EP  - 009
DO  - 10.15407/spqeo25.01.006
UR  - https://doi.org/10.15407/spqeo25.01.006
AB  - This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5...25 hours). This is the most cost-effective way to create material for semiconductor devices and solar cells with stable parameters.
KW  - silicon
KW  - thermal donor
KW  - nickel
KW  - doping
KW  - thermal stability
ER  -