@article{spqeo26n1p30,
  title = {Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study},
  author = {D.V. Savchenko and D.M. Yatsyk and O.M. Genkin and Yu.F. Nosachov and O.V. Drozdenko and V.I. Moiseenko and E.N. Kalabukhova},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2023},
  volume = {26},
  number = {1},
  pages = {30--35},
  doi = {10.15407/spqeo26.01.030},
  url = {https://doi.org/10.15407/spqeo26.01.030},
  abstract = {The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration N D – N A ) ? 1•10 17 ...4•10 19 cm –3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (? 1 ) and electron hopping over nitrogen donors in the D 0 bands (? 3 ) were determined. It was found that in 6H-SiC ? 1 = 50 meV for (N D – N A ) ? 1•10 17 cm –3 , ? 1 = 32 meV and ? 3 = 6 meV for (N D – N A ) ? 1•10 19 cm –3 , ? 1 = 13.5 meV and ? 3 = 3.5 meV for ((N D – N A ) ? 4•10 19 cm –3 .},
  keywords = {conductivity, SiC, cavity perturbation method, activation energy}
}