TY  - JOUR
AU  - D.V. Savchenko
AU  - D.M. Yatsyk
AU  - O.M. Genkin
AU  - Yu.F. Nosachov
AU  - O.V. Drozdenko
AU  - V.I. Moiseenko
AU  - E.N. Kalabukhova
TI  - Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
PY  - 2023
VL  - 26
IS  - 1
SP  - 30
EP  - 35
DO  - 10.15407/spqeo26.01.030
UR  - https://doi.org/10.15407/spqeo26.01.030
AB  - The silicon carbide (SiC) single crystals of 6H polytype with nitrogen donor concentration N D – N A ) ? 1•10 17 ...4•10 19 cm –3 grown using the modified Lely method were studied applying the cavity perturbation method. From the temperature dependence of the resonant frequency shift and microwave loss of the cavity loaded with samples under study, the temperature dependence of the conductivity was estimated. From the temperature dependence of the natural logarithm of conductivity versus 1000/T, the activation energies for processes corresponding to electron transitions from impurity levels to the conduction band (? 1 ) and electron hopping over nitrogen donors in the D 0 bands (? 3 ) were determined. It was found that in 6H-SiC ? 1 = 50 meV for (N D – N A ) ? 1•10 17 cm –3 , ? 1 = 32 meV and ? 3 = 6 meV for (N D – N A ) ? 1•10 19 cm –3 , ? 1 = 13.5 meV and ? 3 = 3.5 meV for ((N D – N A ) ? 4•10 19 cm –3 .
KW  - conductivity
KW  - SiC
KW  - cavity perturbation method
KW  - activation energy
ER  -