@article{spqeo26n1p68,
  title = {Luminescent and Raman study of nanostructures formed upon annealing of SiO x :Sm films},
  author = {K.V. Michailovska and I.Z. Indutnyi and P.E. Shepeliavyi and M.V. Sopinskyy and V.A. Dan’ko and V.O. Yukhymchuk},
  journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
  year = {2023},
  volume = {26},
  number = {1},
  pages = {68--75},
  doi = {10.15407/spqeo26.01.068},
  url = {https://doi.org/10.15407/spqeo26.01.068},
  abstract = {ncs-Si–SiO x :Sm structures formed by high-temperature air annealing of the SiO x films doped with samarium during thermal co-evaporation in vacuum of silicon monoxide and metallic Sm was studied. By measuring the spectra of photoluminescence (PL), it has been shown that doping of SiO x films with Sm stimulates their decomposition into Si and SiO 2 , and also reduces the transition temperature of silicon nanoparticle from the amorphous state to the crystalline one. With an increase in the impurity content up to 2 wt.%, along with the ncs-Si luminescence, the PL spectrum exhibits emission bands of Sm 3+ and Sm 2+ ions, which do not appear at a lower Sm concentration. The presence of silicon nanocrystals in SiO x films doped with Sm and annealed at 970 °C in air has been confirmed using Raman scattering spectra. A possible mechanism for interaction of samarium ions with the SiO x matrix and ncs-Si has been discussed.},
  keywords = {silicon nanoparticles, silicon nanocomposites, rare-earth, photoluminescence, Raman spectra, samarium}
}