TY  - JOUR
AU  - K.V. Michailovska
AU  - I.Z. Indutnyi
AU  - P.E. Shepeliavyi
AU  - M.V. Sopinskyy
AU  - V.A. Dan’ko
AU  - V.O. Yukhymchuk
TI  - Luminescent and Raman study of nanostructures formed upon annealing of SiO x :Sm films
T2  - Semiconductor Physics, Quantum Electronics & Optoelectronics
PY  - 2023
VL  - 26
IS  - 1
SP  - 68
EP  - 75
DO  - 10.15407/spqeo26.01.068
UR  - https://doi.org/10.15407/spqeo26.01.068
AB  - ncs-Si–SiO x :Sm structures formed by high-temperature air annealing of the SiO x films doped with samarium during thermal co-evaporation in vacuum of silicon monoxide and metallic Sm was studied. By measuring the spectra of photoluminescence (PL), it has been shown that doping of SiO x films with Sm stimulates their decomposition into Si and SiO 2 , and also reduces the transition temperature of silicon nanoparticle from the amorphous state to the crystalline one. With an increase in the impurity content up to 2 wt.%, along with the ncs-Si luminescence, the PL spectrum exhibits emission bands of Sm 3+ and Sm 2+ ions, which do not appear at a lower Sm concentration. The presence of silicon nanocrystals in SiO x films doped with Sm and annealed at 970 °C in air has been confirmed using Raman scattering spectra. A possible mechanism for interaction of samarium ions with the SiO x matrix and ncs-Si has been discussed.
KW  - silicon nanoparticles
KW  - silicon nanocomposites
KW  - rare-earth
KW  - photoluminescence
KW  - Raman spectra
KW  - samarium
ER  -