Semiconductor Physics, Quantum Electronics & Optoelectronics, 28 (1), P. 019-025 (2024).
DOI: https://doi.org/10.15407/spqeo28.01.019

Peculiarities of formation of a potential barrier in a dispersed medium of a two-phase dispersed system based on ZrO2 and Ca6H2O19Si6

Yu.Yu. Bacherikov1,2*, O.B. Okhrimenko1*, A.G. Zhuk1, V.V. Ponomarenko1, D.V. Pekur1, I.A. Danilenko3, A.I. Lyubchyk4, S.I. Lyubchyk4

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Avenue, 03028 Kyiv, Ukraine
2V. Vernadsky Institute of General and Inorganic Chemistry, NAS of Ukraine,
32/34 Academician Palladin Avenue, 03142 Kyiv, Ukraine
3O. Galkin Donetsk Institute for Physics and Engineering, NAS of Ukraine, 46 Nauky Avenue, 03028 Kyiv, Ukraine
4DeepTechLab, RCM2+. Universidade Lusofona, Campo Grande, 376, Lisboa 1749-024, Portugal
Corresponding authors e-mail: yuyu@isp.kiev.ua, olga@isp.kiev.ua



Abstract. In this paper, a current-voltage characteristics method is used to study the peculiarities of formation of a potential barrier in a dispersed medium of a two-phase dispersed system based on ZrO2 and Ca6H2O19Si6. Using the obtained experimental data, a possibility of creating diode structures based on two-phase dispersed systems is confirmed. The configuration of the interface between the dispersed phases of the two-layer structure is shown to define the parameters of the potential barrier in a dispersed medium.

Keywords: current-voltage characteristics, two-layer structure, potential barrier, dispersed system.

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