Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (1), P. 004–008 (2026).
DOI: https://doi.org/10.15407/spqeo29.01.004
Raman spectroscopy: contributions to the SPQEO journal
Petro Smertenko*, Galyna Rudko, Zoia Maksimenko, Alexander Belyaev
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028, Kyiv, Ukraine
*Corresponding author e-mail: petrosmertenko@gmail.com
Abstract. This editorial highlights the focus of Semiconductor Physics, Quantum Electronics & Optoelectronics (SPQEO) on the achievements of Raman spectroscopy (RS) in addressing complex challenges in modern semiconductor physics. Built upon the foundational principles of the classical Raman effect, RS has evolved into a powerful diagnostic technique within materials science, quantum electronics, and optoelectronics. Its inherent advantages—including non-destructive probing, remote sensing capabilities, high spatial resolution, and rapid phase and composition identification—have driven its widespread adoption. Furthermore, breakthroughs such as Surface-Enhanced Raman Scattering (SERS) have pushed the boundaries of sensitivity, enabling single-molecule detection through enhancement factors reaching 10^14–10^15.
Keywords: Raman spectroscopy, Raman effect, optical diagnostics, SPQEO journal.
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