Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (1), P. 019–027 (2026).
DOI: https://doi.org/10.15407/spqeo29.01.019

Synthesis of Ge_1–xSn_x and Ge_1–x–ySn_xC_y films by magnetron sputtering followed by laser annealing

V.O. Yukhymchuk*, G.G. Tarasov, M.Ya. Valakh, P.M. Lytvyn, O.Yo. Gudymenko, N.V. Mazur, T.M. Sabov, V.S. Yefanov, V.M. Dzhagan

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Nauky Ave., 03028 Kyiv, Ukraine
*Corresponding author e-mail: v.yukhymchuk@gmail.com

Abstract. Ge_1–xSn_x is a critically important material for creating direct-bandgap semiconductors integrated into silicon photonic platforms. However, the low equilibrium solubility of Sn in Ge and high mechanical strain in Ge_1–xSn_x films hinder their application. This work develops a cost-effective method for producing structurally stable Ge_1–xSn_x films with relatively high Sn content by incorporating carbon and evaluates the efficiency of laser annealing for crystallization. Amorphous films were deposited by magnetron sputtering and subjected to laser and thermal annealing. Laser annealing enables formation of films with substitutional Sn content up to 4.2 at.% and crystallite size ~30 nm, significantly exceeding thermal annealing results. Co-incorporation of carbon improves surface morphology.

Keywords: Ge_1–x–ySn_x, Ge_1–x–ySn_xC_y, direct bandgap, magnetron sputtering, laser annealing, stress compensation.

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