Semiconductor Physics, Quantum Electronics & Optoelectronics, 29 (1), P. 040–044 (2026).
DOI: https://doi.org/10.15407/spqeo29.01.040


Advanced InSb–Sb eutectic alloys with tailored interfaces for high thermoelectric efficiency

M.V. Kazimov1,3,4*, G.B. Ibragimov1,3, B.G. Ibragimov1,2

1Institute of Physics, Ministry of Science and Education of the Republic of Azerbaijan, G. Javid ave 131, AZ1073 Baku
2Azerbaijani-French University, 183 Nizami street, Baku, Azerbaijan
3Baku State University, Z. Khalilov str., 23, Az1148 Baku, Azerbaijan
4Sumgait State University, 43rd district, Baku street 1, AZ5008 Sumgait
*Corresponding author e-mail: mobilkazimov@gmail.com

Abstract. An InSb–Sb eutectic composite prepared by the Bridgman method has been analyzed using structural and thermal analysis, Raman spectroscopy, and X-ray diffraction. Needle-shaped Sb inclusions oriented along the solidification direction are observed in the InSb matrix. The melting temperatures and enthalpy of melting have been determined. The anisotropy in electrical conductivity is attributed to short-circuiting effects caused by these inclusions.

Keywords: eutectic composite, structure, X-ray diffraction, scanning electron microscopy, thermal and electrical conductivity.

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