PACS 81.65 C

Dissolution of indium arsenide in nitric solutions of the hydrobromic acid

Z. F. Tomashik, S. G. Danylenko, V. N. Tomashik

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 1. P.80-83. Eng. Il.: 3. Ref.: 9

Dissolution of InAs in HNO3-HBr-H2O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO3]/[HBr] ratio, InAs dissolution may be limited by kinetic, or diffusion, or combined mechanisms. The dissolution rate of InSb in these solutions is rather low, and the etched surface is covered with a friable sediment. HNO3 -HBr-H2O solutions can be employed for a dynamic chemical polishing of InAs with a variable etching rate.

Keywords: dissolution, etchant, indium arsenide, nitric acid, hydrobromic acid, diffusion stage, kinetic limitations.

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