PACS: 07.79.-v, 07.10.Pz,) 7.10 Cm, 07.07.Df, 85.40.Qx, 84.37.+q

Silicon-on-insulator technology for microelectromechanical applications

A. Y. Usenko, W. N. Carr

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 1. P.93-97. Eng. Il.: 4. Ref.: 19

A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of CMOS-MEMS integration for smart sensors are listed. Examples of successful use of SOI to fabricate advanced MEMS are given and future prospects MEMS on SOI are evaluated.

Keywords: micromechanical systems, silicon-on-insulator, sensors, review.

[Contents]
Full text in PDF (Portable Document Format) are available for free. [PDF 173K]
The copies of  separate papers in PDF format can be ordered using the address journal@isp.kiev.ua too.