PACS 73.40.Ns, 68.60.Dv

Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

Ye. F. Venger, V. V. Milenin, I. B. Ermolovich, R. V. Konakova, D. I. Voitsikhovskiy, I. Hotovy, V. N. Ivanov

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 1. P.124-132. Eng. Il.: 8. Ref.: 8

For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, optical and electrophysical methods, such as electronography, X-ray diffraction, atomic force microscopy, Auger electron spectroscopy, secondary-ion mass spectrometry, taking photoluminescence spectra and I - V curves. A physical model for contact formation was proposed. According to it, BxGa1-xAs (GaNxAs1-x) solid solutions are formed at the phase interfaces when titanium borides (nitrides) are deposited. The defects are produced in the semiconductor near-surface regions during heterostructure formation and further heat treatment. The correlation between the physico-chemical interactions at contact interfaces and the contact electrophysical parameters occurs through these defects. The objects of our investigation demonstrated high thermal stability. This was due to their two-layer structure formed by components having well-pronounced antidiffusion properties. As a result, the interdiffusion processes at the phase interfaces are drastically weakened.

Keywords: metal - semiconductor contacts, titanium borides, titanium nitrides, thermal stability.

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