Semiconductor Physics, Quantum Electronics and Optoelectronics, 2 (1) P. 080-083 (1999).
References
1. B. D. Luft, V. A. Perevoshchikov, L. N. Vozmilova et al.: Fiziko-khimicheskie metody obrabotki poverkhnosti poluprovodnikov (Physical and chemical methods for treatment of semiconductor surfaces, in Russian). - Radio i Svyazí Publ., Moscow, (1982).
2. V. A. Perevoshchikov: Processes of dynamic chemical polishing of semiconductor surfaces (in Russian) // Vysokochistye Veshchestva. 2, pp. 5-29 (1995).
3. L. N. Vozmilova, M. M. Berdichenko: A study of local GaAs and InP etching with dimethylformamide solution of bromine (in Russian) // Izvestiya AN SSSR. Neorganicheskie Materialy.16(1),pp.†13-17 (1980).
4. S. Adochi, K. Oe: Chemical Etching Characteristic of (001) GaAs // J. Electrochem. Soc. 130(12), pp. 2427-2434 (1983). https://doi.org/10.1149/1.2119608
5. T. Matsuoka, H. Nagai: InP Etchant for Submicron Patterns // J.Electrochem. Soc.133(12), pp. 2484-2491 (1986). https://doi.org/10.1149/1.2108455
6. P. H. L. Notten, A. A. J. M. Damen; The Electrochenistry of InP in Br2/HBr Solutions and its Relevance to etching Behaviour // Appl. Surf. Sci. 28, pp. 331-344 (1987). https://doi.org/10.1016/0169-4332(87)90135-8
7. S. N. G. Chu, C. M. Jodlauk, A. A. Ballman: New Dislocation Etchant for InP // J. Electrochem. Soc.129(2), pp. 352-354 (1982). https://doi.org/10.1149/1.2123835
8. V. N. Tomashik, A. A. Sava: Interaction of tellurium and telluri-um-containing semiconducting compounds with nitric solutions of hydrobromic acid (in Russian) // Izvestiya AN SSSR. Neorganicheskie Materialy. 28(2), pp. 324-328 (1992).
9. A. A. Nemodruk: Analytical Chemistry of Antimony (in Russian). -Nauka Publ., Moscow, (1978).