Semiconductor Physics, Quantum Electronics and Optoelectronics, 2 (1) P. 153-156 (1999).


References

1. N. I. Zakharov, A. V. Bagdasarian. Mekhanicheskie yavleniya v integralnykh strukturakh (Mechanical phenomena in the integral structures).- M.: Radio i Sviazí.- 1992.- p.144 (in Russian).
2. S. Prussin. // J.Appl.Phys. - 32,(18). - p.76 (1961).
https://doi.org/10.1063/1.1728256
3. V. T. Grinchenko, E. V. Nikitenko, B. K. Serdega. Issledovanie metodom poliarizatsionnoy moduliatsii fotouprugogo effecta, indutsirovannogo gradientom temperatury (Investigations by the method of polarization modulation of photoelasticity effect induced by the temperature gradient). Doklady NAN Ukrainy.-1998.- No.10.- p.45-49 (in Russian).
4. V. E. Lashkarev, V. A. Romanov. Obíemnaya fotoeds v poluprovodnikakh (Volume photovoltage in semiconductors) // Radiotekhnika i elektronika.- 1956.- 1, ser. 8.- p.1144-1146 (in Russian).
5. B. K. Serdega. Sposob izmereniya dvoinogo lucheprelomleniya (Technique of measurement of double refraction) Ukrainian Patent No. 19983A of 01.07.94.
6. A. Gerard, C. M. Burch. Vvedenie v matrichnuyu optiku (Introduction to matrix optics).- M: Mir.- 1978.- p.340 (Russian translation).
7. R. Feinman, R. Leiton, M. Sands. Feinman lectures on physics.5.- 1996.- p.296 (Russian translation).