Semiconductor Physics, Quantum Electronics and Optoelectronics, 4 (2) P. 093-105 (2001).


References

1. Thin Films: Interdiffusion and Reactions, Eds. J.M. Poate, K.N. Tu, J.W. Mayer, Wiley-Interscience Publ. John Wiley and Sons, New York-Chichester-Brisbane-Toronto-Singapore (1978).
2. M.A. Nicolet, Diffusion barrier in thin films // Thin Solid Films 52, pp. 415-443 (1978).
https://doi.org/10.1016/0040-6090(78)90184-0
3. K. Gershinsky, A.V. Rzhanov, E.I. Cherenov, Thin film silicides in electronics (in Russian) // Mikroelektronika 11(2), pp. 83-94 (1982).
4. M. Shur, GaAs Devices and Circuits, Plenum Press, New York-London (1987).
https://doi.org/10.1007/978-1-4899-1989-2
5. Physical Values: Handbook (in Russian), Eds. I.S. Grigoriev, E.S. Meilikhov, Energoatomizdat, Moscow (1991).
6. M. Hansen, R. Anderko, Constitution of Binary Alloys, v I,II, McGraw-Hill, New York-Toronto-London (1958).
https://doi.org/10.1149/1.2428700
7. L.S. Hung, J. Gyulai, J.W. Mayer, S.S. Lau, M.A. Nicolet // J. Appl. Phys. 54(9), pp. 5076-5080 (1983).
https://doi.org/10.1063/1.332781
8. Youn Tac Kim, Chi-Hoon Sun, Sin Ho Lee, Song Tae Back, Hyung Souh Yoo // J. Vac. Sci. Technol. A14(6), pp. 3245-3251 (1996).
9. S.P. Murarca, Silicides for VLSI Application, Academic Press, New York-London-Paris (1983).
10. G.G. Ottoviani // Mat. Reg. Soc. Symp. 16, pp. 21-31 (1975).
11. E. Zsoldos, G. Peto, V. Sohillet, G. Valyi // Thin Solid Films 137, pp. 243-245 (1986).
https://doi.org/10.1016/0040-6090(86)90026-X
12. F.M. Heurle, E.A. Itens, Y.A. Ting // Appl. Phys. Lett. 42(4),pp. 361-363 (1983).
https://doi.org/10.1063/1.93940
13. R. Pretorius, J.M. Harris, M.A. Nicolet // Solid State Electronics 21, pp. 667-675 (1978).
https://doi.org/10.1016/0038-1101(78)90335-0
14. M. Wittmer // J. Vac. Sci. Technol. A2(2), pp. 273-280 (1984).
https://doi.org/10.1116/1.572580
15. J. Suni, M. Maenpaa, M.A. Nicolet, M. Luomajaw // J. Electrochem. Soc.: Solid State Science and Technology 130(8),pp. 1215-1218 (1983)
https://doi.org/10.1149/1.2119920
16. R.S. Howicki, M.A. Nicolet // Thin Solid Films 96(3) pp. 317-326 (1982).
https://doi.org/10.1016/0040-6090(82)90515-6
17. Rare Earth Compounds (in Russian), Nauka, Moscow (1983).
18. N. Cheng, H. Von Seeteld, M.A. Nicolet, In: Proc. Symposium on Thin Film Interfaces and Interactions, Thin Solid Films 80(2), pp. 323-337 (1980).
19. J. Breza, M. Kadlecikova, R.V. Konakova, V.G. Lyapin, V.V. Milenin, V.A. Statov, Yu.A. Tkhorik, M.Yu. Filatov, Radiation processing of Cr-GaAs contacts // Appl. Phys. Letters. 67(10) pp.1462-1464 (1995).
https://doi.org/10.1063/1.114495
20. L.S. Kleinfeld, R.V. Konakova, V.F. Sinkevich, A.A.Pavlenko, The influence of radiation-stimulated gettering on the reliability of structures // J. Electrical Eng. 44(6) pp. 177-178(1993).
21. A.E. Belyaev, J. Breza, E.F. Venger, M. Vesely, I.Yu.Il'in, R.V. Konakova, J. Liday, V.G. Lyapin, V.V. Milenin, I.V. Prokopenko, Yu.A. Tkhorik, Radiation Resistance of GaAs-based Microwave Schottky-barrier Devices (Some physico-technological aspects), Interpress Ltd., Kiev (1998).
22. N.S. Boltovets, R.V. Konakova, V.A. Krivutsa, E.A. Soloviev, M.B. Tagaev, Effect of γ-radiation on the electrophysical parameters of silicon p-i-n diodes (in Russian) // Voprosy Atomnoi Nauki i Tekhniki, Nos 3(69)/4(70), pp. 48-50 (1998).
23. N.S. Boltovets, V.V. Basanets, A.V. Tsvir, A.M. Kurakin, E.F. Venger, R.V. Konakova, V.F. Mitin, E.A. Soloviev, Silicon IMPATT diodes of improved reliability, In: Proc. 10th International Crimean Conference «Microwave & Telecommunication Technologies» CriMiCo'2000, 11-15 September 2000,pp. 139-140.
https://doi.org/10.1109/CRMICO.2000.1255878