Semiconductor Physics, Quantum Electronics and Optoelectronics, 4 (2) P. 111-117 (2001).


References

1. H. Fritzche, The origin of the reversible and non-reversible photo-structural transformations in chalcogenide glasses // Philosophical Magazine B., 68(4), pp. 561-572 (1993).
https://doi.org/10.1080/13642819308217935
2. P.J.S. Ewen and A.E. Owen, Photoinduced changes in chalcogenide glasses and their applications. In. High-Performance Glasses, Eds. M.Carble and J.M.Parker, «Blackie», Glasgow and London, pp. 287-337 (1992).
3. S.R. Elliott, A unified model for reversible photostructural effects in chalcogenide glasses // J.Non-Cryst.Sol.,81(1-2),pp. 71-98 (1986).
https://doi.org/10.1016/0022-3093(86)90260-7
4. H. Fritzsche, Towards understanding the photo-induced changes in chalcogenide glasses // FTP (Semiconductors), 32 (8), pp. 952-957 (1998).
https://doi.org/10.1134/1.1187471
5. V.Ê. Malinovsky, About the mechanism of photo-transformations in the optical recording registering media // Autometry, ¹1, pp. 25-49 (1985).
6. V.K. Tikhomirov, Photoinduced effects in undoped and rare-earth doped chalcogenide glasses: review // J.Non-Cryst.Sol., 256&257,pp. 328-336 (1999).
https://doi.org/10.1016/S0022-3093(99)00399-3
7. K. Tanaka, Photoinduced structural changes in amorphous semiconductors // FTP (Semiconductors), 32(8), pp.964-969 (1998).
https://doi.org/10.1134/1.1187473
8. C.A.Dembovsky and E.A.Chechetkina, Glass formation, Nauka, Moscow, 1990, 278p. (in Russian).
9. J.C.Phillips, Topology of covalent non-crystalline solids II: medium range order in chalcogenide alloys and a-Si(Ge) // J.Non-Cryst.Sol.,43 (1), pp.37-77 (1981).
https://doi.org/10.1016/0022-3093(81)90172-1
10. J.C.Phillips, The physics of glass // Physics Today, February,pp.27-33 (1982).
https://doi.org/10.1063/1.2914932
11. J.C.Phillips. and M.F. Thorpe, Constraint theory, vector percolation and glass formation // Solid State Communs.,53(8),pp.699-702 (1985).
https://doi.org/10.1016/0038-1098(85)90381-3
12. M.F. Thorpe and D.J. Jacobs, The structure and rigidity of network glasses. In: Insulating and Semiconducting Glasses(Series on directions in condensed matter physics, v.17), Editor P.Boolchand, World Scientific, Singapore, 2000, pp. 95-146.
https://doi.org/10.1142/9789812813619_0004
13. S.V.Svechnikov, V.V.Khiminets, N.I. Dovgoshey, Complex non-crystalline chalcogenides and chalcohalogenides and their applications in optoelectronics Kiev: Naukova Dumka, 1992,296p. (in Russian).
14. A. Feltz, Amorphous and vitreous inorganic solid states. Mir, Moscow 1986, 556p. (in Russian).
15. G.G.Naumis, R. Kerner Stochastic matrix description of glass transition in ternary chalcogenide systems // J.Non-Cryst.Solids,231, pp. 111-119 (1998).
https://doi.org/10.1016/S0022-3093(98)00417-7
16. T. Wagner and S.O.Kasap, Glass transformation, heat capacity and structure of AsxSe1-x glasses studied by modulated temperature differential scanning calorimetry experiments // Phil. Mag. B,74, (6) pp.667-680 (1996).
https://doi.org/10.1080/01418639608241069
17. Insulating and semiconducting glasses (Series on directions in condensed matter physics, v.17), Editor P.Boolchand, World Scientific, Singapore, 2000.-882p.
18. T.Wagner, S.O.Kasap, M.Vlèek, A.Sklenaø, A.Stronski, The structure of AsxS100-x glasses studied by temperature modulated differential scanning calorimetry and Raman spectroscopy // J.Non-Cryst.Solids, 227-230, Pt.II, pp.752-756 (1998).
https://doi.org/10.1016/S0022-3093(98)00194-X
19. T.Wagner, S.O.Kasap, M.Vlèek, A.Sklenaø, A.Stronski, Temperature-modulated differential scanning calorimetry and Raman spectroscopy studies of AsxS100-x glasses // Journal of Material Science, 33(I.23) pp. 5581-5588 (1998).
20. M.Vlèek, A.Stronski, A.Sklenaø, S.A.Kostioukevitch, and P.F.Romanenko, Photoimaging properties and imaging technology on the base of As40Se60 thin layers // Proceedings of SPIE, 3450, pp. 125-132 (1998).
21. A.V.Stronski, M.Vlèek, A.Sklenaø, P.F.Romanenko, S.A.Kostyukevich, Lightsensitive properties of As40Se60 layers //Optoelectronics and semiconductor technique, I.34,pp.65-71 (1999).
22. P.Boolchand, private communication.
23. A.Stronski, M.Vlèek, A. Sklenaø, Photoinduced structural changes in As100-xSx layers // Semiconductor Physics, Quantum Electronics & Optoelectronics, 3(3), pp. 394-399 (2000).
https://doi.org/10.15407/spqeo3.03.394
24. M.Vlèek, A.Stronski, A.Sklenaø, T.Wagner and S.O. Kasap Structure and Imaging properties of As40S60-xSex layers as a function of their composition // J.Non-Cryst.Solids,266-269(I.1-3) pp.964-968 (2000).
https://doi.org/10.1016/S0022-3093(00)00038-7
25. M.Vlèek, M. Frumar and A.Vidourek, Photoinduced effects in Ge-Sb-S glasses and amorphous layers // J.Non-Cryst. Solids,90 (1-3), pp. 513-516 (1987).
https://doi.org/10.1016/S0022-3093(87)80475-1
26. G. Saffarini, Compositional trends of the compactness in ternary chalcogenide glasses of the Ge-In-Se system // Physica B,253, pp. 52-55 (1998).
https://doi.org/10.1016/S0921-4526(98)00386-X
27. Z.U. Borisova, Chalcogenide semiconductor glasses, L.: Leningrad University, 1983.-344p. (in Russian).
28. Amorphous semiconductors. Ed. M.Brodsky. Mir, Moscow1982.- 416p. (in Russian).
29. F.Kosek, Z.Cimpl, J.Tulka, J.Chlebny, New analytic method for investigation of the distribution of bonds in As-S systems // J.Non-Cryst.Solids,90(3), pp.401-404 (1987).
https://doi.org/10.1016/S0022-3093(87)80450-7
30. N.D.Aksenov, L.L.Makarov, S.B.Mamedov Chemical ordering in As2Se3 films under photostructural transformations. In.: Non-crystalline semiconductors-89, «Patent», Uzhgorod,2,pp.192-194 (1989).
31. A.V.Stronski, M.Vlèek, P.E.Shepeljavi, A.Sklenaø, S.A.Kostyukevich, Image formation properties of As40S20Se40 thin layers in application for gratings fabrication // Semiconductor Physics, Quantum Electronics & Optoelectronics,2(1),pp.111-114 (1999).
https://doi.org/10.15407/spqeo2.01.111
32. A.V.Stronski, M.Vlèek, A.I.Stetsun, A.Sklenaø, P.E. Shepeljavi, Raman spectra of Ag- and Cu-photodoped As40S60-xSex films // J.Non-Cryst.Solids,270(I.1-3), pp.129-136 (2000).
https://doi.org/10.1016/S0022-3093(00)00002-8
33. A.Stronski, M.Vlèek, Imaging properties of As40S40Se20 layers // Optoelectronics Review,8, N3, pp.63-67, 2000.
34. R.J.Nemanich, G.A.N.Connel, T.M.Hayers, and R.A.Street, Thermally induced effects in evaporated chalcogenide films.I. Structure // Phys.Rev. B, 18(12), pp.6900-6914 (1978).
https://doi.org/10.1103/PhysRevB.18.6900
35. O.I. Shpotyuk, On the mechanism of reversible radiation-structural transformations in chalcogenide vitreous semiconductors // Journal of Applied Spectroscopy, 59(5-6) pp.550-553 (1993).
https://doi.org/10.1007/BF00664938
36. S.A.Dembovsky, S.A.Zyubin, F.V.Grigoriev, The modeling of the hypervalent configurations, valence alternation pairs, deformed structure and properties of the a-S and a-As2S3 // FTP (Physics and Technology of Semiconductors), 32 (8)pp.944-951 (1998).
https://doi.org/10.1134/1.1187470
37. S.A.Zenkin, S.B.Mamedov, M.D.Mikhailov, E.Yu.Turkina and I.Yu.Yusupov Mechanism for interaction of amine solutions with monolithic glasses and amorphous films in the As-S system // Glass Physics and Chemistry,23(5) pp.393-399(1997).