emiconductor Physics, Quantum Electronics & Optoelectronics, 5 (2), P. 138-141 (2002)
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 138-141.
PACS: 61.72.V, 61.80.-x, 79.60.-i
Influence of ion implantation and annealing
on composition and structure of GaAs surface
Abstract. In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba+ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga0.6Ba0.4As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å.
Keywords: ion-implantation, photoelectron
spectroscopy, post-implantation annealing.
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