emiconductor Physics, Quantum Electronics & Optoelectronics, 5 (2), P. 138-141 (2002)

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 138-141.

PACS: 61.72.V, 61.80.-x, 79.60.-i

Influence of ion implantation and annealing on composition and structure of GaAs surface
M.T. Normuradov1), B.E. Umirzakov2), D.A. Tashmukhamedova2), A.K. Tashatov1)
1)Karshin Engineer-and-economics
2)Tashkent State Technical University
E-mail: ftmet@rambler.ru

Abstract. In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba+ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga0.6Ba0.4As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å.

Keywords: ion-implantation, photoelectron spectroscopy, post-implantation annealing.
Paper received 29.03.01; revised manuscript received 03.06.02; accepted for publication 25.06.02.

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