Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 152-155.

PACS: 77.84.B

Mechanism of 6H-3C transformation in SiC

S.I. Vlaskina

Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kiev, Ukraine
Phone: +380(44) 269 3792; fax +380(44) 265 8342; e-mail:businkaa@mail.ru
Dong Seoul College, 461-714, 423,
Bokjung-Dong, Sungnam- city, Kyonggi-do, Korea
Phone: 82(031)7202141; fax 82(0342)7202261; e-mail:svitlana@haksan.dsc.ac.kr

Abstract. Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation.

Keywords: silicon carbide, phase transformation.

Paper received 11.02.02; revised manuscript received 28.05.02; accepted for publication 25.06.02.

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