emiconductor Physics, Quantum Electronics & Optoelectronics, 5 (2), P. 163-169 (2002)
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 163-169.
PACS: 78.20.Bh, 78.40
Urbach’s edge of glassy HgSe-GeSe2 alloys: static disorder and temperature dependence of optical absorption
1)Department of Solid State Physics, Volyn State
University, 13 prospect Voli, 43009 Lutsk, Ukraine
Abstract. Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe2 are represented. To explain the phenomenon of anomaly growth of the static disorder, the model of deforming tensions is discussed. The hypothesis concerning a sharp change of physical-and-chemical properties for the transition over the double eutectic point on the stable phase diagram of the HgSe - GeSe2 system with a changing glass-creating matrix is suggested.
Keywords: fundamental absorption, static
disorder, glass-creating matrix.
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