emiconductor Physics, Quantum Electronics & Optoelectronics, 5 (2), P. 176-179 (2002)

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 2. P. 176-179.

PACS: 72.40, 74.40

Photoelectric properties of nGa2O3-pGaSe-pInSe cascade heterostructures

V.P. Savchyn, J.M. Stakhira, Ya.M. Fiyala, V.B. Furtak

Ivan Franko National University of Lviv, 50 Dragomanov Str., 79005 Lviv, Ukraine,
e-mail: savchyn@wups.lviv.ua

Abstract. Cascade heterostructure of nGa2O3-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe heterojunction the photosensitivity spectrum of nGa2O3-pGaSe-pInSe heterostructure extends up to 1.2 eV in IR range as referred to the photosensitivity spectrum of anisotype nGa2O3-pGaSe heterojunction.

Keywords: heterostructure, heterojunction, photosensitivity, indium selenide, gallium selenide, gallium oxide.

Paper received 14.03.02; revised manuscript received 24.05.02; accepted for publication 25.06.02.

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