1. A. Ishibashi, J. Crystal Growth 159,p. 555 (1996).
https://doi.org/10.1016/0022-0248(95)00586-2 | | | 2. G. Bacher, D. Tonnies, D. Eisert, A. Forchel, M.O. Mooller, M. Korn, B. Jobst, D. Hommel, G. Landwehr, J. Sollner, and M. Heuken, J. Appl. Phys.79, p. 4368 (1996). J. Y. Leem, J. S. Son, C. R. Lee, C. S. Kim, Y. K. Cho, Hwack J. Lee, S. K. Noh, and I. H. Bae Appl. Phys. Letters 71,p.3257 (1997).
https://doi.org/10.1063/1.361746 | | | 3. J. Gutowski, N. Presser, and G. Kudlek, // Phys. stat. sol. (a)120,pp. 11-16 (1990).
https://doi.org/10.1002/pssa.2211200102 | | | | 4. L. S. Khazan, L. A. Matveeva, G. N. Semenova, and Yu. A. Tkhorik // Phys. stat. sol, (a) 54, pp. 447-451 (1979). | | | 5. M. Yoneta, H. Saito, and M. Ohishi, J. Crystal Growth., 138,pp. 110-115 (1994).
https://doi.org/10.1016/0022-0248(94)90789-7 | | | 6. A. Hoffmann, B. Lummer, L. Eckey, V. Kutzer, Ch. Fricke, R. Heitz, I. Broser, E. Kurtz, B. Jobst, and D. Hommel, J.Crystal Growth.,138, pp. 1073-1081 (1994).
https://doi.org/10.1016/0022-0248(94)90959-8 | | | 7. K. Shahzad, J. Petruzzello, D.J. Olego, and D.A. Cammak, Appl. Phys. Lett. 57,pp. 2452-2457 (1990).
https://doi.org/10.1063/1.103875 | | | 8. T. Mitsui and N. Yamamoto, J. appl. Phys., 81, pp. 7492 -7496 (1997).
https://doi.org/10.1063/1.365441 | | | 9. K. Wolf, S. Jilka, H. Sahin, H. Stanzl, T. Reisinger, A. Naumov, and W. Gebhardt, J. Crystal Growth.,152,pp. 34-37 (1995).
https://doi.org/10.1016/0022-0248(95)00101-8 | | | | 10. V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G.Litovchenko, Optical Properties of Semiconductors, Ed. M.P.Lisitsa, Naukova dumka, Kiev, pp. 438 (1987). | | | 11. J. P. Faurie, P. Brunet, C. Morhain, C. Ongaretto, and E. Tournie // Phys. stat. sol(b)., 187, pp. 457-460 (1995).
https://doi.org/10.1002/pssb.2221870226 | | | 12. K. Shahzad, D.J. Olego, D.A. Cammack // Phys. Rev.B., 39(17), pp. 13016-13019 (1989).
https://doi.org/10.1103/PhysRevB.39.13016 | | | | 13. Tarbaev N.I., Shepelskii G.A. // Semiconductors. 32, (8), pp.646-653 (1998). | | |
|