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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 001-003.
The role of optical phonons in electrons heating by IR radiation in Ge
Institute of Physics, NAS of Ukraine, 46, prospect Nauky, 03028 Kyiv, Ukraine
Fax: (38 044)525-15-89, e-mail: poroshin@iop.kiev.ua
Abstract. An expression for the coefficient of light absorption by “hot” electrons in
many-valley semiconductors for carrier scattering by nonpolar optical phonons in
dependence on the carrier temperature and electron concentration in each valley has been
obtained. It was shown that taking into account the contribution of such scattering into
absorption of a CO2 laser radiation enables to achieve a quantitative agreement between
the calculated and experimental values for the intervalley redistribution of electrons due
to heating carriers by the light wave in Ge at 300 and 77 K.
Keywords: many-valley semiconductor, free electron light absorption, carrier heating,
intervalley redistribution.
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