Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 2. P. 007-011.
https://doi.org/10.15407/spqeo8.02.007

Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
W. Wierzchowski1, A. Misiuk2, K. Wieteska3, J. Bak-Misiuk4, W. Jung2, A. Shalimov4, W. Graeff5, and M. Prujszczyk2

1Institute of Electronic Materials Technology, Wolczynska 133, PL-01-919 Warsaw, Poland
2Institute of Electron Technology, Al. Lotnikow 46, PL-02-668 Warsaw, Poland
3Institute of Atomic Energy, PL-05-400 Otwock-Swierk, Poland
4Institute of Physics, PAS, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland
5HASYLAB at DESY, Notkestrasse 85, D-22603 Hamburg, Germany Corresponding author: Tel. +48-22-548-7792; fax +48-22 847-0631; E-mail: misiuk@ite.wawpl (A. Misiuk)

Abstract. Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H2 + (DH,He= 5·1016 cm–2, at energy 50 and 150 keV, respectively) was investigated by means of X-ray (synchrotron) diffraction, transmission electron microscopy, and electrical measurements. The nanostructured sponge-like buried layers are formed in Si:(He,H) by annealing / high pressure treatment. Decreased interference, diffuse scattering and individual contrast are observed in the synchrotron topograms for HT-HP treated Si:(He,H). The treatment at 723 K and HP results in an additional donor formation as a sequence of the implantation-disturbed layer. The HP-mediated (retarded) out-diffusion of hydrogen and helium is in part responsible for the effects observed.

Keywords: Cz-Si, hydrogen, helium, implantation, diffusion, high pressure, treatment.

Full Text (PDF)

Back to N2 Volume 8